SAMSUNG SEMICONDUCTOR

IRF644

BRAND NEW

250V N-CHANNEL MOSFET

CASE: TO-220

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Features
• 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V

• Low gate charge ( typical 47 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

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